FCB260N65S3数据手册ONSEMI中文资料规格书

描述 Description

SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is suitable for various DC/AC power conversion for system miniaturization and higher efficiency.

特性 Features

• 700 V @ TJ = 150 °C
• Higher system reliability at low temperature operation
• Low Effective Output Capacitance (Typ. Coss(eff.) = 248 pF)
• Lower switching loss
• Ultra Low Gate Charge (Typ. Qg= 24 nC)
• Lower switching loss
• Internal Gate resistance: 8.7ohm
• Lower peak Vds and lower Vgs oscillation
• Optimized Capacitance
• Lower peak Vds and lower Vgs oscillation
• Typ. RDS(on) = 222 mΩ
• 100% Avalanche Tested
• RoHS Compliant
• Wave soldering guarantee

应用 Application

• Computing
• Consumer
• Industrial
• Notebook / Desktop computer / Game console
• Telecom / Server
• LCD / LED TV
• LED Lighting / Ballast
• Automation
• Adapter