NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1=4.7kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC136 is formed with two chips, being equivalent to the 2SC3900, place

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PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistances (R1=4.7kΩ)). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC137 is formed with two chips, being equivalent to the 2SA1510, pla

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NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1=4.7kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC138 is formed with two chips, being equivalent to the 2SC3900, place

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Low-Frequency General-Purpose Amp, General Driver Applications

Low-Frequency General-Purpose Amp, General Driver Applications Features • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC139 is formed with two chips, being equivalent to the 2SC3689, placed in one package. • A

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High-Speed Switching Applications

High-Speed Switching Applications Features • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • Small output capacitance, high gain-bandwidth product. • The FC140 is formed with two chips, being equivalent to the 2SC4452

文件：100.17 Kbytes 页数：3 Pages

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PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features · On-chip bias resistance (R1=4.7kΩ, R2=10kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC142 is formed with two chips, being equivalent to

文件：46.37 Kbytes 页数：2 Pages

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NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1=4.7kΩ, R2=10kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC143 is formed with two chips, being equivalent to the 2SC43

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NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC144 is formed with two chips, being equivalent to the 2SC3

文件：44.86 Kbytes 页数：2 Pages

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Low-Frequency General-Purpose Amp, Driver Applications

Low-Frequency General-Purpose Amp, Driver Applications Features • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC149 is formed with two chips, being equivalent to the 2SA1813, placed in one package. • Adoption

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Low-Frequency General-Purpose Amp, Driver Applications

PNP/NPN Epitaxial Planar Silicon Composite Transistor Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC150 is formed with two chips, being equivalent to the 2SA1813/2SC4413, placed in one pack a

文件：145.43 Kbytes 页数：4 Pages

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