FC125

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=47kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC125isformedwithtwochips,beingequivalenttothe2SA1508,placed

FC126

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

NPNEpitaxialPlanarSiliconCompositeTransistor SwitchingApplications(withBiasResistance) Features ·On-chipbiasresistance(R1=47kΩ). ·Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. ·TheFC126isformedwith

FC127

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=10kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC127isformedwithtwochips,beingequivalenttothe2SA1496,placed

FC128

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Features •On-chipbiasresistance(R1=10kΩ). •Compositetypewith2transistorscontainedinthe CPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC128isformedwithtwochips,beingequivalent tothe2SC3859,placedinonepackage. •Excellentintherma

FC129

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=10kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC129isformedwithtwochips,beingequivalenttothe2SA1496,placed

FC13

Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications

Features •Compositetypewith2FETscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC13isformedwithtwochips,beingequivalenttothe2SK303,placedinonepackage. •Excellentinthermalequilibriumandpaircapabilityandespeciallysuited

FC130

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=10kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC130isformedwithtwochips,beingequivalenttothe2SC3859,placed

FC131

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ)). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC131isformedwithtwochips,beingequivalenttothe2SA1

FC132

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC132isformedwithtwochips,beingequivalenttothe2SC40

FC133

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=10kΩ,R2=47kΩ)). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC133isformedwithtwochips,beingequivalenttothe2SA1