FC117

Low-Frequency General-Purpose Amp Applications

PNPEpitaxialPlanarSiliconCompositeTransistor Features ·Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. ·TheFC117isformedwithtwochips,beingequivalenttothe2SA1753,placedinonepackage. ·Low

FC118

Low-Frequency General-Purpose Amp Applications

NPNEpitaxialPlanarSiliconCompositeTransistor Features ·Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. ·TheFC118isformedwithtwochips,beingequivalenttothe2SC4577,placedinonepackage. ·Low

FC119

High-Frequency General-Purpose Amp, Differential Amp Applications

NPNEpitaxialPlanarSiliconTransistor Features ·Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. ·TheFC119isformedwithtwochips,beingequivalenttothe2SC2814,placedinonepackage. ·Excellentint

FC11M2

TUNING FORK CRYSTAL IN SMD 1.6X1.0MM CERAMIC SEAM SEAL PACKAGE

FEATURES Smalldimensions1.6x1.0x0.5mmwith2solderpads. Highlyreliablevacuumseamsealedceramicpackage. Usableforhightemperaturereflow. RoHScompliant,LEAD-FREEandHALOGEN-FREE. APPLICATIONS Mobilcommunicationdevices Handheldequipment

FC12

High-Frequency Amp, AM Applications, Low-Frequency Amp

Features •Compositetypewith2transistorscontainedinthe CPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC12isformedwithtwochips,beingequivalent tothe2SC4639,placedinonepackage. •Commondrainandemitter.

FC120

High-Frequency General-Purpose Amp, Differential Amp Applications

High-FrequencyGeneral-PurposeAmp,DifferentialAmpApplications Features •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC120isformedwithtwochips,beingequivalenttothe2SC3142,placedinonepackage.

FC120N4

Positronic Provides Complete Capability

Experience •Foundedin1966 •Involvementinthedevelopmentofinternationalconnector specificationsthroughEIA®,IECandISOaswellasPICMG®. •Introductionofnewanduniqueconnectorproductstotheelectronicsindustry. •Patentholderformanyuniqueconnectorfeaturesandmanufact

FC121

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistances(R1=2.2kΩ,R2=10kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC121isformedwithtwochips,beingequivalenttothe2SA1

FC123

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

PNPEpitaxialPlanarSiliconCompositeTransistorSwitchingApplications (withBiasResistance) Features ·On-chipbiasresistance(R1=47kΩ). ·Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. ·TheFC123is

FC124

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

SwitchingApplications(withBiasResistance) Features •On-chipbiasresistance(R1=47kΩ). •Compositetypewith2transistorscontainedintheCPpackagecurrentlyinuse,improvingthemountingefficiencygreatly. •TheFC124isformedwithtwochips,beingequivalenttothe2SC3898,placed