High-Frequency General-Purpose Amp, Differential Amp Applications

NPN Epitaxial Planar Silicon Transistor Features · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC119 is formed with two chips, being equivalent to the 2SC2814, placed in one package. · Excellent in t

文件：139.44 Kbytes 页数：5 Pages

SANYO

三洋

TUNING FORK CRYSTAL IN SMD 1.6X1.0MM CERAMIC SEAM SEAL PACKAGE

FEATURES Small dimensions 1.6x1.0x0.5mm with 2 solder pads. Highly reliable vacuum seam sealed ceramic package. Usable for high temperature reflow. RoHS compliant, LEAD-FREE and HALOGEN-FREE. APPLICATIONS Mobil communication devices Handheld equipment

文件：339.98 Kbytes 页数：1 Pages

HANGJING

杭晶电子

High-Frequency Amp, AM Applications, Low-Frequency Amp

Features • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC12 is formed with two chips, being equivalent to the 2SC4639, placed in one package. • Common drain and emitter.

文件：153.01 Kbytes 页数：5 Pages

SANYO

三洋

High-Frequency General-Purpose Amp, Differential Amp Applications

High-Frequency General-Purpose Amp, Differential Amp Applications Features • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC120 is formed with two chips, being equivalent to the 2SC3142, placed in one package.

文件：174.08 Kbytes 页数：6 Pages

SANYO

三洋

Positronic Provides Complete Capability

Experience • Founded in 1966 • Involvement in the development of international connector specifications through EIA®, IEC and ISO as well as PICMG®. • Introduction of new and unique connector products to the electronics industry. • Patent holder for many unique connector features and manufact

文件：5.06369 Mbytes 页数：86 Pages

POSITRONIC

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistances (R1=2.2kΩ, R2=10kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC121 is formed with two chips, being equivalent to the 2SA1

文件：39.39 Kbytes 页数：2 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features · On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC123 is

文件：37.87 Kbytes 页数：2 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1=47kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC124 is formed with two chips, being equivalent to the 2SC3898, placed

文件：36.3 Kbytes 页数：2 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

Switching Applications (with Bias Resistance) Features • On-chip bias resistance (R1=47kΩ). • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC125 is formed with two chips, being equivalent to the 2SA1508, placed

文件：36.14 Kbytes 页数：2 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance)

NPN Epitaxial Planar Silicon Composite Transistor Switching Applications (with Bias Resistance) Features · On-chip bias resistance (R1=47kΩ). · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC126 is formed with

文件：35.97 Kbytes 页数：2 Pages

SANYO

三洋