零件型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
FAD8253 | 丝印:FAD8253MX;Package:SOIC-14NB;Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink Description TheFAD8253isamonolithichalf−bridgegatedriverICdesignedfordrivinghighvoltage,highspeedandhighpowerIGBTsupto+1200V.TheFAD8253employsON’shigh−voltageprocessandcommon−modenoisecancelingtechniquetoprovidestableoperationofhigh−sidedriverunderhighd | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink Description TheFAD8253isamonolithichalf−bridgegatedriverICdesignedfordrivinghighvoltage,highspeedandhighpowerIGBTsupto+1200V.TheFAD8253employsON’shigh−voltageprocessandcommon−modenoisecancelingtechniquetoprovidestableoperationofhigh−sidedriverunderhighd | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink; • Qualified to AEC Q100\n• PPAP capable\n• Floating channel for boostrap operation to +1200V\n• Allowable negative VS transient down to -15V at VBS=15V\n• Built-in common mode dV/dt noise canceling circuit\n• Separate power and signal ground for enhanced immunity against high dI/dt\n• Matched propagation delay \n• 3.3V and 5V input logic compatible\n• Built in shoot-through prevention logic with 120ns (typ) dead time\n• Built-in UVLO functions for high and low sides with thresholds optimized for IGBTs\n• Built-in low side short-circuit protection function with fault reporting function; with low side soft shutdown.\n• In SOIC14NB with Non Connected pins for High Voltage creepage and clearance requirements\n• Peak Output current capability 2.5A Source 3.4A Sink\n; The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shift circuit allows high-side gate driver transient operation down to VS = -15V for VBS = 15V.\nUVLO circuits tailored to IGBT as per FAD8253 IC to prevent malfunction when VDD and VBS are lower than the specified threshold voltage.\nThe output drivers of FAD8253 source/sink 2.5A/3.4A (typical), respectively, which is suitable for half-bridge and full-bridge applications in motor drive systems. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
1200V Half-Bridge Gate Driver, 2.5 A Source/3.4 A Sink, SOIC-8 package; • Qualified to AEC Q100\n• PPAP capable\n• Floating channel for boostrap operation to +1200V\n• Allowable negative VS transient down to -15V at VBS=15V\n• Built-in common mode dV/dt noise canceling circuit\n• Separate power and signal ground for enhanced immunity against high dI/dt\n• Matched propagation delay \n• 3.3V and 5V input logic compatible\n• Built in shoot-through prevention logic with 120ns (typ) dead time\n• Built-in UVLO functions for high and low sides with thresholds optimized for IGBTs\n• Built-in low side short-circuit protection function with fault reporting function; with low side soft shutdown.\n• In SOIC14NB with Non Connected pins for High Voltage creepage and clearance requirements\n• Peak Output current capability 2.5A Source 3.4A Sink\n; The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shift circuit allows high-side gate driver transient operation down to VS = -15V for VBS = 15V.\nUVLO circuits tailored to IGBT as per FAD8253 IC to prevent malfunction when VDD and VBS are lower than the specified threshold voltage.\nThe output drivers of FAD8253 source/sink 2.5A/3.4A (typical), respectively, which is suitable for half-bridge and full-bridge applications in motor drive systems. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink Description TheFAD8253isamonolithichalf−bridgegatedriverICdesigned fordrivinghighvoltage,highspeedandhighpowerIGBTsupto +1200V.TheFAD8253employsON’shigh−voltageprocessand common−modenoisecancelingtechniquetoprovidestableoperation ofhigh−sidedriverunderhi | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Package:14-SOIC(0.154",3.90mm 宽);包装:卷带(TR) 类别:集成电路(IC) 栅极驱动器 描述:1200V 2.5A HALF-BRIDGE GATE DRIV | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
技术参数
- Pb-free:
Pb
- AEC Qualified:
A
- Halide free:
H
- PPAP Capablee:
P
- Status:
Active
- Power Switch:
MOSFET/IGBT
- Number of Outputs:
2
- Topology:
Half-Bridge
- Isolation Type:
Junction Isolation
- Vin Max (V):
25.3
- VCC Max (V):
25
- Drive Source/Sink Typ (mA):
2500/2500
- Rise Time (ns):
25
- Fall Time (ns):
26
- tp Max (ns):
145
- Package Type:
SOIC-14
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ON/安森美 |
22+ |
24000 |
原装正品现货,实单可谈,量大价优 |
询价 | |||
ON |
22+ |
NA |
30000 |
原装正品支持实单 |
询价 | ||
onsemi(安森美) |
24+ |
SOP14 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ONN |
2405+ |
原厂封装 |
2130 |
只做原装优势现货库存 渠道可追溯 |
询价 | ||
ON |
24+ |
SOIC-14 |
25000 |
ON全系列可订货 |
询价 | ||
24+ |
N/A |
79000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 | |||
onsemi |
23+/24+ |
14-SOIC |
8600 |
只供原装进口公司现货+可订货 |
询价 | ||
ONN |
2324+ |
2130 |
原装正品,超低价出售 |
询价 | |||
onsemi(安森美) |
2025+ |
SOIC-14 |
55740 |
询价 | |||
ALCATEL |
22+ |
DIP |
5000 |
进口原装!现货库存 |
询价 |
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