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FAD8253

丝印:FAD8253MX;Package:SOIC-14NB;Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description TheFAD8253isamonolithichalf−bridgegatedriverICdesignedfordrivinghighvoltage,highspeedandhighpowerIGBTsupto+1200V.TheFAD8253employsON’shigh−voltageprocessandcommon−modenoisecancelingtechniquetoprovidestableoperationofhigh−sidedriverunderhighd

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FAD8253MX

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description TheFAD8253isamonolithichalf−bridgegatedriverICdesignedfordrivinghighvoltage,highspeedandhighpowerIGBTsupto+1200V.TheFAD8253employsON’shigh−voltageprocessandcommon−modenoisecancelingtechniquetoprovidestableoperationofhigh−sidedriverunderhighd

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FAD8253MX

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink; • Qualified to AEC Q100\n• PPAP capable\n• Floating channel for boostrap operation to +1200V\n• Allowable negative VS transient down to -15V at VBS=15V\n• Built-in common mode dV/dt noise canceling circuit\n• Separate power and signal ground for enhanced immunity against high dI/dt\n• Matched propagation delay \n• 3.3V and 5V input logic compatible\n• Built in shoot-through prevention logic with 120ns (typ) dead time\n• Built-in UVLO functions for high and low sides with thresholds optimized for IGBTs\n• Built-in low side short-circuit protection function with fault reporting function; with low side soft shutdown.\n• In SOIC14NB with Non Connected pins for High Voltage creepage and clearance requirements\n• Peak Output current capability 2.5A Source 3.4A Sink\n;

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shift circuit allows high-side gate driver transient operation down to VS = -15V for VBS = 15V.\nUVLO circuits tailored to IGBT as per FAD8253 IC to prevent malfunction when VDD and VBS are lower than the specified threshold voltage.\nThe output drivers of FAD8253 source/sink 2.5A/3.4A (typical), respectively, which is suitable for half-bridge and full-bridge applications in motor drive systems.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FAD8253MX-1

1200V Half-Bridge Gate Driver, 2.5 A Source/3.4 A Sink, SOIC-8 package; • Qualified to AEC Q100\n• PPAP capable\n• Floating channel for boostrap operation to +1200V\n• Allowable negative VS transient down to -15V at VBS=15V\n• Built-in common mode dV/dt noise canceling circuit\n• Separate power and signal ground for enhanced immunity against high dI/dt\n• Matched propagation delay \n• 3.3V and 5V input logic compatible\n• Built in shoot-through prevention logic with 120ns (typ) dead time\n• Built-in UVLO functions for high and low sides with thresholds optimized for IGBTs\n• Built-in low side short-circuit protection function with fault reporting function; with low side soft shutdown.\n• In SOIC14NB with Non Connected pins for High Voltage creepage and clearance requirements\n• Peak Output current capability 2.5A Source 3.4A Sink\n;

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shift circuit allows high-side gate driver transient operation down to VS = -15V for VBS = 15V.\nUVLO circuits tailored to IGBT as per FAD8253 IC to prevent malfunction when VDD and VBS are lower than the specified threshold voltage.\nThe output drivers of FAD8253 source/sink 2.5A/3.4A (typical), respectively, which is suitable for half-bridge and full-bridge applications in motor drive systems.

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FAD8253MX-1

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description TheFAD8253isamonolithichalf−bridgegatedriverICdesigned fordrivinghighvoltage,highspeedandhighpowerIGBTsupto +1200V.TheFAD8253employsON’shigh−voltageprocessand common−modenoisecancelingtechniquetoprovidestableoperation ofhigh−sidedriverunderhi

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FAD8253MX

Package:14-SOIC(0.154",3.90mm 宽);包装:卷带(TR) 类别:集成电路(IC) 栅极驱动器 描述:1200V 2.5A HALF-BRIDGE GATE DRIV

ONSEMION Semiconductor

安森美半导体安森美半导体公司

技术参数

  • Pb-free:

    Pb

  • AEC Qualified:

    A

  • Halide free:

    H

  • PPAP Capablee:

    P

  • Status:

    Active

  • Power Switch:

    MOSFET/IGBT

  • Number of Outputs:

    2

  • Topology:

    Half-Bridge

  • Isolation Type:

    Junction Isolation

  • Vin Max (V):

    25.3

  • VCC Max (V):

    25

  • Drive Source/Sink Typ (mA):

    2500/2500

  • Rise Time (ns):

    25

  • Fall Time (ns):

    26

  • tp Max (ns):

    145

  • Package Type:

    SOIC-14

供应商型号品牌批号封装库存备注价格
ON/安森美
22+
24000
原装正品现货,实单可谈,量大价优
询价
ON
22+
NA
30000
原装正品支持实单
询价
onsemi(安森美)
24+
SOP14
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
ONN
2405+
原厂封装
2130
只做原装优势现货库存 渠道可追溯
询价
ON
24+
SOIC-14
25000
ON全系列可订货
询价
24+
N/A
79000
一级代理-主营优势-实惠价格-不悔选择
询价
onsemi
23+/24+
14-SOIC
8600
只供原装进口公司现货+可订货
询价
ONN
2324+
2130
原装正品,超低价出售
询价
onsemi(安森美)
2025+
SOIC-14
55740
询价
ALCATEL
22+
DIP
5000
进口原装!现货库存
询价
更多FAD8253供应商 更新时间2025-7-28 15:01:00