丝印：FAD8253MX；Package：SOIC-14NB；Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under high d

文件：348.99 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under high d

文件：348.99 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under hi

文件：284.44 Kbytes 页数：19 Pages

ONSEMI

安森美半导体