Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under high d

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丝印：FAD8253MX；Package：SOIC-14NB；Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under high d

文件：348.99 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

Description The FAD8253 is a monolithic half−bridge gate driver IC designed for driving high voltage, high speed and high power IGBTs up to +1200 V. The FAD8253 employs ON’s high−voltage process and common−mode noise canceling technique to provide stable operation of high−side driver under hi

文件：284.44 Kbytes 页数：19 Pages

ONSEMI

安森美半导体

Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shi • Qualified to AEC Q100\n• PPAP capable\n• Floating channel for boostrap operation to +1200V\n• Allowable negative VS transient down to -15V at VBS=15V\n• Built-in common mode dV/dt noise canceling circuit\n• Separate power and signal ground for enhanced immunity against high dI/dt\n• Matched propag;

ONSEMI

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Package：14-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR） 类别：集成电路（IC） 栅极驱动器 描述：1200V 2.5A HALF-BRIDGE GATE DRIV

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1200V Half-Bridge Gate Driver, 2.5 A Source/3.4 A Sink, SOIC-8 package

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.\nON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.\nAn advanced level-shi • Qualified to AEC Q100\n• PPAP capable\n• Floating channel for boostrap operation to +1200V\n• Allowable negative VS transient down to -15V at VBS=15V\n• Built-in common mode dV/dt noise canceling circuit\n• Separate power and signal ground for enhanced immunity against high dI/dt\n• Matched propag;

ONSEMI

安森美半导体