FAD8253MX中文资料Half-Bridge Gate Driver 1200 V 2.5 A Source/3.4 A Sink数据手册ONSEMI规格书

描述 Description

The FAD8253 is a monolithic half-bridge gate drive IC designed for high voltage, high speed driving IGBTs operating up to +1200V.
ON’s high-voltage process and common-mode noise canceling technique provide stable operation of high-drivers under high-dV/dt noise circumstances.
An advanced level-shift circuit allows high-side gate driver transient operation down to VS = -15V for VBS = 15V.
UVLO circuits tailored to IGBT as per FAD8253 IC to prevent malfunction when VDD and VBS are lower than the specified threshold voltage.
The output drivers of FAD8253 source/sink 2.5A/3.4A (typical), respectively, which is suitable for half-bridge and full-bridge applications in motor drive systems.

特性 Features

• Qualified to AEC Q100
• PPAP capable
• Floating channel for boostrap operation to +1200V
• Allowable negative VS transient down to -15V at VBS=15V
• Built-in common mode dV/dt noise canceling circuit
• Separate power and signal ground for enhanced immunity against high dI/dt
• Matched propagation delay
• 3.3V and 5V input logic compatible
• Built in shoot-through prevention logic with 120ns (typ) dead time
• Built-in UVLO functions for high and low sides with thresholds optimized for IGBTs
• Built-in low side short-circuit protection function with fault reporting function; with low side soft shutdown.
• In SOIC14NB with Non Connected pins for High Voltage creepage and clearance requirements
• Peak Output current capability 2.5A Source 3.4A Sink

应用 Application

• High Voltage Auxiliary motor drive
• Generic Half-Bridge and Full-Bridge Driver
• Switching Mode Power Supplies and On-Board Chargers
• EV/HEV

简介

FAD8253MX属于集成电路（IC）的栅极驱动器。由制造生产的FAD8253MX栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。