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IRF9530NPBF

HEXFET짰PowerMOSFET

VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NPBF

P-Channel100V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PowerSwitch •LoadSwitchinHighCurrentApplications •DC/DCConverters

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

IRF9530NS

PowerMOSFET(Vdss=-100V,Rds(on)=0.20ohm,Id=-14A)

VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NS

AdvancedProcessTechnology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleonresistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowintern

KERSEMI

Kersemi Electronic Co., Ltd.

IRF9530NS

iscP-ChannelMOSFETTransistor

•FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤200mΩ(@VGS=-10V;ID=-8.4A) •Advancedtrenchprocesstechnology •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Fastswitchingapplication.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IRF9530NSPBF

AdvancedProcessTechnologySurfaceMount

VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

AdvancedProcessTechnology

VDSS=-100V RDS(on)=0.20Ω ID=-14A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignt

IRF

International Rectifier

IRF9530NSPBF

ADVANCEDPROCESSTECHNOLOGY

IRF

International Rectifier

IRF9530NSPBF

HEXFET짰PowerMOSFET

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

IRF9530NSTRLPbF

HEXFET짰PowerMOSFET

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
进口原装
23+
TO-220
3000
全新原装
询价
IR
1738+
TO-220
8529
科恒伟业!只做原装正品,假一赔十!
询价
IR
23+
TO220
12625
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
IR
22+
TO-220
6000
终端可免费供样,支持BOM配单
询价
IR
2023+环保现货
TO220
10
专注军工、汽车、医疗、工业等方案配套一站式服务
询价
IR
23+
TO-220
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-220
8000
专注配单,只做原装进口现货
询价
IR
23+
TO-220
7000
询价
IR
25+
TO-220
15
原装正品,假一罚十!
询价
IR
24+
TO-263
5000
全现原装公司现货
询价
更多F9530N供应商 更新时间2025-7-16 20:21:00