IMIC9530CYT

PCIXI/OSystemClockGeneratorwithEMIControlFeatures

Features •Dedicatedclockbufferpowerpinsforreducednoise,crosstalkandjitter •Inputclockfrequencyof25MHzto33.3MHz •OutputfrequenciesofXINx1,XINx2,XINx3andXINx4 •Outputgroupedintwobanksoffiveclockseach •OneREFXINclockoutput •SMBusclockcontrolinterfac

IRF9530

PowerMOSFET

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipa

IRF9530

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRF9530

P-CHANNELPOWERMOSFETS

FEATURES •LowRDS(on) •Improvedinductiveruggedness •Fsatswitchingtimes •Ruggedpolysilicongatecellstructure •Lowinputcapacitance •Extendedsafeoperatingarea •Improvedhightemperaturereliability

IRF9530

12A,100V,0.300Ohm,P-ChannelPowerMOSFETs

12A,100V,0.300Ohm,P-ChannelPowerMOSFETs TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.Allofthesepowe

IRF9530

TRANSISTORS

Features: ■P-ChannelVersatility ■CompactPlasticPackage ■FastSwitching ■LowDriveCurrent ■EaseofParalleling ■ExcellentTemperatureStability

IRF9530

P-ChannelMOSFET

■Features ●VDS(V)=-100V ●ID=-13A(VGS=-10V) ●RDS(ON)

IRF9530

SEMICONDUCTORS

IRF9530

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetp

IRF9530

iscP-ChannelMosfetTransistor

FEATURES ·DrainCurrent:ID=-12A@TC=25℃ ·DrainSourceVoltage :VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.3Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,D