PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetim

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Polyfet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER 10Watts Single Ended

General Description\nSilicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. \"Polyfet\"TMrocess features gold metal for greatly extended lifetim

Polyfet RF Devices

Low Cost, Compact 20W, 2:1 Input Range DC/DC Converters

Key Features: • 20W Output Power • 2:1 Input Voltage Range • 1,500 VDC Isolation • Single & Dual Outputs • Efficiency to 86 • Compact 1.6 x 2 In. Case • -40°C to +71°C Operation • Industry Standard Pin-Out • Lowest Cost!!

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MPD

F2000ERW SERIES

文件：217.73 Kbytes 页数：2 Pages

MPD

Compact, 20W Low Cost, 2:1 Input, DC/DC Converters

MPD