F2012中文资料Polyfet数据手册PDF规格书
F2012规格书详情
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. PolyfetTMrocess features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
产品属性
- 型号：
F2012
- 制造商：
POLYFET
- 制造商全称：
Polyfet RF Devices
- 功能描述：
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
SOP-8 |
480 |
原装正品,假一罚十! |
询价 | ||
POLYFET |
24+ |
285 |
现货供应 |
询价 | |||
TI/德州仪器 |
20+ |
TSSOP14 |
67500 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
MPD |
25+ |
DIP |
55000 |
原厂渠道原装正品假一赔十 |
询价 | ||
TI/德州仪器 |
2223+ |
TSSOP14 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
询价 | ||
POLYFEI |
23+ |
高频管 |
280 |
专营高频管模块,全新原装! |
询价 | ||
POLYFET |
24+ |
23 |
询价 | ||||
TI |
专业铁帽 |
TSSOP14 |
1558 |
原装铁帽专营,代理渠道量大可订货 |
询价 | ||
FERRAZ/罗兰熔断器 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
询价 | ||
TI/德州仪器 |
2023+ |
TSSOP14 |
1558 |
专注全新正品,优势现货供应 |
询价 |
