F2012中文资料PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER 10Watts Single Ended数据手册Polyfet RF Devices规格书
F2012规格书详情
描述 Description
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. \"Polyfet\"TMrocess features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
技术参数
- 型号：
F2012
- 制造商：
POLYFET
- 制造商全称：
Polyfet RF Devices
- 功能描述：
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MPD |
25+ |
DIP |
55000 |
原厂渠道原装正品假一赔十 |
询价 | ||
RENESAS/瑞萨 |
25+ |
SOP-8 |
480 |
原装正品,假一罚十! |
询价 | ||
POLYFEI |
23+ |
高频管 |
280 |
专营高频管模块,全新原装! |
询价 | ||
FERRAZ/罗兰 |
23+ |
888 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
TI |
23+ |
TSSOP14 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
TI |
20+ |
TSSOP14 |
2960 |
诚信交易大量库存现货 |
询价 | ||
TI |
25+ |
TSSOP1.. |
114 |
全新现货 |
询价 | ||
TI/德州仪器 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
TI |
23+ |
QFN-16 |
24546 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
询价 | ||
24+ |
N/A |
82000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
