F2012中文资料PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER 10Watts Single Ended数据手册Polyfet RF Devices规格书
F2012规格书详情
描述 Description
General Description
Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. \"Polyfet\"TMrocess features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance
技术参数
- 型号：
F2012
- 制造商：
POLYFET
- 制造商全称：
Polyfet RF Devices
- 功能描述：
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
SOP-8 |
480 |
原装正品,假一罚十! |
询价 | ||
TI |
20+ |
TSSOP14 |
2960 |
诚信交易大量库存现货 |
询价 | ||
MPD |
23 |
DIP |
55000 |
原厂渠道原装正品假一赔十 |
询价 | ||
POLYFEI |
23+ |
高频管 |
280 |
专营高频管模块,全新原装! |
询价 | ||
POLYFET |
24+ |
23 |
询价 | ||||
POLYFEI |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
询价 | ||
TI/德州仪器 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
TI/德州仪器 |
2447 |
TSSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
TI |
23+ |
SSOP14 |
6000 |
专注配单,只做原装进口现货 |
询价 | ||
TI/德州仪器 |
20+ |
TSSOP14 |
67500 |
原装优势主营型号-可开原型号增税票 |
询价 |
