DTB114E技术资料参数批发供应罗姆第2页-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
F1400A	文件：242.22 Kbytes Page：1 Pages	9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator F1400A Series 9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator 文件：242.22 Kbytes 页数：1 Pages	MTRONPTI	MTRONPTI
F1400AM	文件：242.22 Kbytes Page：1 Pages	9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator F1400A Series 9x14 mm FR-4, 5.0 Volt, Sinewave, Clock Oscillator 文件：242.22 Kbytes 页数：1 Pages	MTRONPTI	MTRONPTI
F1401	文件：42.7 Kbytes Page：2 Pages	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim 文件：42.7 Kbytes 页数：2 Pages	POLYFET	POLYFET
F1402	文件：43.24 Kbytes Page：2 Pages	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime 文件：43.24 Kbytes 页数：2 Pages	POLYFET	POLYFET
F1404N	文件：632.44 Kbytes Page：1 Pages	Precision Lab Standard N Connectors Features o Precision Connector - Interface dimensions per MIL-STD-348 Test connector o Rugged Construction - Numerically controlled machining is used to produce high quality uniform parts with controlled concentricity and surface finishes. The result is excellent SWR repeatability. 文件：632.44 Kbytes 页数：1 Pages	APITECH	APITECH
F1410	文件：36.23 Kbytes Page：2 Pages	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime 文件：36.23 Kbytes 页数：2 Pages	POLYFET	POLYFET
F1415	文件：39.95 Kbytes Page：2 Pages	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features gold metal for greatly extended lifetim 文件：39.95 Kbytes 页数：2 Pages	POLYFET	POLYFET
F1419	文件：539.77 Kbytes Page：1 Pages	Medium Power Features o Miniature Size and Lightweight - All models are approximately 1.6 inches long, and weigh less than 14 grams with male connector. o Quality Injection Molded Connector. 文件：539.77 Kbytes 页数：1 Pages	APITECH	APITECH
F1419	文件：43.28 Kbytes Page：2 Pages	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime 文件：43.28 Kbytes 页数：2 Pages	POLYFET	POLYFET
F1427	文件：41.82 Kbytes Page：2 Pages	PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR? General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime 文件：41.82 Kbytes 页数：2 Pages	POLYFET	POLYFET

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晶体管资料

型号：
DTB114E(A,F,L,S,V)
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-P+R
性质：
开关管（S）
封装形式：
直插封装
极限工作电压：
50V
最大电流允许值：
0.5A
最大工作频率：
<1MHZ或未知
引脚数：
3
可代换的型号：
RN2224,UN4123,2SA1522,2SA1526,
最大耗散功率：
0.6W
放大倍数：
图片代号：
A-68
vtest：
50
htest：
999900
atest：
0.5
wtest：
0.6

技术参数

VCCVCEO(V)Max.：
50.000
IO(MAX.)IC(MAX.)(mA)：
500.000
GI(hFE)MIN.：
56.000
GI(hFE)test_IO(mA)：
50.000
GI(hFE)test_VO(V)：
5.000
R1(KΩ)Typ.：
10.000
R2(KΩ)Typ.：
10.000
fTTyp.(MHz)：
200.000
Package：
SOT-23_SOT-323

供应商	型号	品牌	批号	封装	库存	备注	价格
芯有半导体（深圳）有限公司	DTB114ES		05+	原厂原装	5051	只做全新原装真实现货供应	询价
深圳市凌旭科技有限公司	DTB114EK	ROHM	2016+	SOT23	6532	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市毅创腾电子科技有限公司	DTB114EK	ROHM	23+	SMD	5700	绝对全新原装!现货!特价!请放心订购!	询价
深圳市一线半导体有限公司	DTB114EKT	ROHM	24+	SOT-23	2000		询价
深圳市益百分电子有限公司	DTB114ES	ROHM	05+	TO92S	5000	原装现货价格有优势量大可以发货	询价
千层芯半导体(深圳)有限公司	DTB114EKT146	ROHM	24+	盘/PBF	2300	只做原装	询价
深圳市弘为电子有限公司	DTB114EKT14K	ROHM	24+	SOT-23	1068	原装现货假一罚十	询价
深圳市欧立现代科技有限公司	DTB114EK	ROHM	24+	SMD	6980	原装现货,可开13%税票	询价
深圳市鹏和科技有限公司	DTB114EKT146	ROHM	24+	SOT23	5000	只做原装公司现货	询价
深圳市达恩科技有限公司	DTB114EKT146	ROHM	24+	NA	3000	进口原装正品优势供应	询价

更多F14供应商更新时间2026-3-10 15:45:00

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