100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 21dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +40dBm at 3.55GHz Output P1dB = +21dBm at 3.55GHz Gain variation over temperature = ±0.2 typical 100Ω differential input impedance 50Ω single-ended output impedance 3.3V or 5V power

文件：2.30984 Mbytes 页数：21 Pages

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100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 21dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +40dBm at 3.55GHz Output P1dB = +21dBm at 3.55GHz Gain variation over temperature = ±0.2 typical 100Ω differential input impedance 50Ω single-ended output impedance 3.3V or 5V power

文件：2.30984 Mbytes 页数：21 Pages

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100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 21dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +40dBm at 3.55GHz Output P1dB = +21dBm at 3.55GHz Gain variation over temperature = ±0.2 typical 100Ω differential input impedance 50Ω single-ended output impedance 3.3V or 5V power

文件：2.30984 Mbytes 页数：21 Pages

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100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 21dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +40dBm at 3.55GHz Output P1dB = +21dBm at 3.55GHz Gain variation over temperature = ±0.2 typical 100Ω differential input impedance 50Ω single-ended output impedance 3.3V or 5V power

文件：2.30984 Mbytes 页数：21 Pages

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丝印：14MB；Package：12-DFN；100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 21dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +40dBm at 3.55GHz Output P1dB = +21dBm at 3.55GHz Gain variation over temperature = ±0.2 typical 100Ω differential input impedance 50Ω single-ended output impedance 3.3V or 5V power

文件：2.30984 Mbytes 页数：21 Pages

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丝印：14MB；Package：12-DFN；100Ω DIFF-In – 50Ω SE-Out Amplifier 3.0GHz to 4.2GHz

Features RF range: 3.0GHz to 4.2GHz Gain = 21dB at 3.55GHz Noise figure = 1.8dB at 3.55GHz OIP3 = +40dBm at 3.55GHz Output P1dB = +21dBm at 3.55GHz Gain variation over temperature = ±0.2 typical 100Ω differential input impedance 50Ω single-ended output impedance 3.3V or 5V power

文件：2.30984 Mbytes 页数：21 Pages

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PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

文件：38.03 Kbytes 页数：2 Pages

POLYFET

TX Digital VGA 1500 MHz to 2950 MHz

The F1456 is a High Gain / High Linearity 1500MHz to 2950MHz TX Digital Variable Gain Amplifier used in transmitter applications. The F1456 TX DVGA provides 32.1dB maximum gain with +38dBm OIP3 and 3.9 dB noise figure. Up to 31.5dB gain control is achieved using the combination of a digital

文件：9.27976 Mbytes 页数：30 Pages

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1W High Linearity RF Amplifier 1350MHz to 2800MHz

Features ■ Frequency range: 1350MHz to 2800MHz ■ TBD typical gain at 2100MHz ■ +30dBm typical OP1dB at 2100MHz ■ 50Ω Single-ended input and output impedances ■ 5V power supply ■ 180mA typical quiescent supply current ■ 1.8V logic compatible standby mode for power savings ■ Operating tempe

文件：309.27 Kbytes 页数：2 Pages

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1W High Linearity RF Amplifier 1350MHz to 2800MHz

Features ■ Frequency range: 1350MHz to 2800MHz ■ TBD typical gain at 2100MHz ■ +30dBm typical OP1dB at 2100MHz ■ 50Ω Single-ended input and output impedances ■ 5V power supply ■ 180mA typical quiescent supply current ■ 1.8V logic compatible standby mode for power savings ■ Operating tempe

文件：309.27 Kbytes 页数：2 Pages

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