PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features gold metal for greatly extended lifetim

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Polyfet

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description\nSilicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.\n\"Polyfet\"™ process features gold metal for greatly extended lifet

Polyfet RF Devices

Components is Designed to Provide cost effective, High performance fiber optic communication links

Description The HFBR-0400 Series of components is designed to provide cost effective, high performance fiber optic communication links for information systems and industrial applications with link distances of up to 4 kilometers. With the HFBR-24X6, the 125 MHz analog receiver, data rates of up t

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HP

安捷伦

Low-Cost, 820 nm Miniature Link Fiber Optic Components with ST, SMA, SC, and FC Ports

Features  RoHS compliant  Low-cost transmitters and receivers  Choice of ST, SMA, SC, or FC ports  820 nm wavelength technology  Signal rates up to 160 MBaud  Link distances up to several kilometers  Compatible with 50/125 μm, 62.5/125 μm, 100/140 μm, and 200 μm Plastic-Clad Silica (

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BOARDCOM

博通

Components is Designed to Provide cost effective, High performance fiber optic communication links

Description The HFBR-0400 Series of components is designed to provide cost effective, high performance fiber optic communication links for information systems and industrial applications with link distances of up to 4 kilometers. With the HFBR-24X6, the 125 MHz analog receiver, data rates of up t

文件：288.97 Kbytes 页数：25 Pages

HP

安捷伦