ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

文件：622.9 Kbytes 页数：6 Pages

XPPOWER

SMD Aluminum Solid Capacitors with Conductive Polymer

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VishayVishay Siliconix

威世威世科技公司

丝印：F12；Package：SOT-23；NPN-General use transistor

NPN-General use transistor 225mW 50m 20V Quality level and executive standard ◆ “G”level QZJ840611 Q/FRQZJ123-2007 ◆ the Ⅱ level of national standard GB4589.1-89 GB/T 12560-1999 Q/FR124-2007 Applications： Can be used for switching and amplifying in various ele

文件：242.38 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：F12；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

文件：704.49 Kbytes 页数：9 Pages

ROHM

罗姆

丝印：F12；Package：SOT-23；500mA/-50V Digital transistor (with built-in resistor)

文件：1.14634 Mbytes 页数：9 Pages

ROHM

罗姆

丝印：F12；Package：SOT-346；-500mA/-50V Digital transistor (with built-in resistors)

文件：1.08595 Mbytes 页数：8 Pages

ROHM

罗姆

丝印：F12；Package：SOD-123F；Schottky Barrier Rectifiers

文件：462.22 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：F12；Package：DFN；Fixed and Adjustable Current Limiting Power Distribution Switches

文件：3.94238 Mbytes 页数：38 Pages

Microchip

微芯科技

丝印：F12N60；Package：TO-220F；12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.58 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：F12N60；Package：TO-220F；12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.09 Kbytes 页数：11 Pages

WXDH

东海半导体