丝印：F12N60；Package：TO-220F；12A 600V N-channel Enhancement Mode Power MOSFET

文件：898.24 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：F12N60；Package：TO-220F；12A 600V N-channel Enhancement Mode Power MOSFET

文件：897.54 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：F12N65；Package：TO-220F；12A 650V N-channel Enhancement Mode Power MOSFET

文件：891.23 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：F12N65；Package：TO-220F；12A 650V N-channel Enhancement Mode Power MOSFET

文件：892.18 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：F12N65；Package：TO-220F；12A 650V N-channel Enhancement Mode Power MOSFET

文件：891.31 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：F12N65；Package：TO-220F；12A 650V N-channel Enhancement Mode Power MOSFET

文件：891.93 Kbytes 页数：11 Pages

WXDH

东海半导体

Superfast Silicon-Rectifiers

• Nominal Current 12 A • Repetitive peak reverse voltage 50...400 V • Plastic case Ø 8 x 7.5 [mm] P600 Style • Weight approx. 1.3 g • Plastic material has UL classification 94V-0 • Standard packaging taped in

文件：93.1 Kbytes 页数：2 Pages

Diotec

德欧泰克

FAST RECOVERY

PRV : 50 - 200 Volts Io : 12 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free

文件：110.54 Kbytes 页数：2 Pages

EIC

High efficiency fast silicion rectifier diode

Forward Current: 12 A Reverse Voltage: 50 to 400 V Features ● Max. solder temperture: 260°C ● Plastic material has UL classification 94V-0

文件：345.3 Kbytes 页数：2 Pages

Semikron

赛米控丹佛斯

Superfast Silicon-Rectifiers

• Nominal Current 12 A • Repetitive peak reverse voltage 50...400 V • Plastic case Ø 8 x 7.5 [mm] P600 Style • Weight approx. 1.3 g • Plastic material has UL classification 94V-0 • Standard packaging taped in

文件：93.1 Kbytes 页数：2 Pages

Diotec

德欧泰克