Ceramic Disc Capacitors Class 2, Low Loss (0.2 ), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC

文件：420.42 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ceramic Disc Capacitors Class 2, Low Loss (0.2 ), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC

文件：420.42 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

Ceramic Disc Capacitors Class 2, Low Loss (0.2 ), 500 VDC, 1 kVDC, 2 kVDC and 3 kVDC

文件：420.42 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

丝印：F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

文件：516.62 Kbytes 页数：11 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

文件：516.62 Kbytes 页数：11 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-BIT SCHOTTKY BARRIER DIODE R-C BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current . . . 300 mA 16-Bit Array Structure Suited for Bus-Oriented Systems description This bus-termination array is designed to reduce reflection noise and minimize ringing on high-performance bus lines. The SN74F1016 feature

文件：516.62 Kbytes 页数：11 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes 页数：292 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes 页数：292 Pages

TI

德州仪器

丝印：F1016；Package：SOIC；16-Bit Schottky Barrier Diode R-C Bus-Termination Array

文件：14.79935 Mbytes 页数：292 Pages

TI

德州仪器

HEXFET® Power MOSFET

Description\nAdvanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, prov

Infineon

英飞凌