10 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL

文件：493.48 Kbytes 页数：2 Pages

POWERBOX

Fuse Blocks and Clips - For 3AG Fuses

Fuse Blocks and Clips - For 3AG Fuses 3AG Screw Terminal Laminated Base Type

文件：660.66 Kbytes 页数：4 Pages

Littelfuse

力特

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

• Advanced Process Technology • Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex

文件：195.51 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：211.92 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：146.82 Kbytes 页数：10 Pages

IRF

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

100 Watts Gemini Package Style AH General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

文件：38.06 Kbytes 页数：2 Pages

Polyfet

Compact I/O station for DeviceNet test us-english

■ Removable 5-pin screw-clamp terminal block, for DeviceNet fieldbus connection ■ Rotary coding switch for setting the DeviceNet™ address ■ 16 Kanäle DI ■ 16 konfigurierbare Kanäle, DI oder DO ■ 24VDC ■ minusschaltend ■ Ausgangsstrom: 0.5A ■ Protection class IP20

文件：191.66 Kbytes 页数：1 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

文件：38.57 Kbytes 页数：2 Pages

Polyfet

1000V DC Midget (10x38mm) Photovoltaic Fuses

FEATURES/BENEFITS: • Low fault current interrupting capability • Durable construction for enhanced system longevity • Temperature cycle withstand capability • Guaranteed operation at temperature extremes • Industry’s first UL Listed Solution • Globally accepted

文件：318.42 Kbytes 页数：2 Pages

MERSEN

美尔森

Ceramic Disc Capacitors, Class 1, Class 2, Low Loss (0.2 %), 500 VDC, 1 kVDC, 2 kVDC, and 3 kVDC

FEATURES • High reliability • Low losses • High capacitance in small size • Kinked leads • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS In electronic circuits where low losses and high capacitance per volume are essential, for exa

文件：112.57 Kbytes 页数：7 Pages

VishayVishay Siliconix

威世威世科技公司