F101

10 WATTS SINGLE & DUAL OUTPUT DC/DC INDUSTRIAL

F101002-ND

Fuse Blocks and Clips - For 3AG Fuses

FuseBlocksandClips-For3AGFuses 3AGScrewTerminalLaminatedBaseType

F1010E

Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

•AdvancedProcessTechnology •UltraLowOn-Resistance •Dynamicdv/dtRating •175°COperatingTemperature •FastSwitching •FullyAvalancheRated Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveex

F1010N

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS=55V RDS(on)=11mΩ ID=85A‡ Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesig

F1010NS

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

F1015

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

100WattsGemini PackageStyleAH GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers.

F1016

Compact I/O station for DeviceNet test us-english

■Removable5-pinscrew-clampterminal block,forDeviceNetfieldbusconnection ■RotarycodingswitchforsettingtheDeviceNet™address ■16KanäleDI ■16konfigurierbareKanäle,DIoderDO ■24VDC ■minusschaltend ■Ausgangsstrom:0.5A ■ProtectionclassIP20

F1018

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

GeneralDescription SiliconVDMOSandLDMOStransistorsdesignedspecificallyforbroadbandRFapplications.SuitableforMilitaryRadios,CellularandPagingAmplifierBaseStations,BroadcastFM/AM,MRI,LaserDriverandothers.

F1012

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

F1012

Micro Flow Sensor