HEXFET® Power MOSFET

Description\nAdvanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, prov

Infineon

英飞凌

Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A??

VDSS = 55V RDS(on) = 11mΩ ID = 85A‡ Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device desig

文件：211.92 Kbytes 页数：8 Pages

IRF

Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

文件：146.82 Kbytes 页数：10 Pages

IRF

10 Amp. Glass Passivated Bridge Rectifier

[FAGOR] 10 Amp. Glass Passivated Bridge Rectifier • Glass Passivated Junction • UL recognized under component index file number E130180 • Terminals: FASTON ① • Terminals: WIRE LEADS ② • Max. Mounting Torque: 25 Kg x cm Lead and polarity identifications High surge current capability

文件：34.65 Kbytes 页数：2 Pages

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