EXB-24N100JX资料datasheet下载供应商报价-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IXFE24N100	文件：428.31 Kbytes Page：2 Pages	SingleMOSFETDie HiPerFETPowerMOSFET SingleMOSFETDie Features •ConformstoSOT-227Boutline •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance •FastintrinsicRectifier Applications •DC-DCconverters •Batte	IXYS IXYS Integrated Circuits Division	IXYS
IXFF24N100	文件：72.28 Kbytes Page：2 Pages	HiPerFETTMPowerMosfetinHighVoltageISOPLUSI4-PACTM Features •HiPerFETTMtechnology -lowRDSon -lowgatechargeforhighfrequencyoperation -unclampedinductiveswitching(UIS)capability -dv/dtruggedness -fastintrinsicreversediode •ISOPLUSI4-PAC™highvoltagepackage -isolatedbacksurface -enlargedcree	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100	文件：329.04 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK24N100F	文件：329.07 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFK24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance	IXYS IXYS Integrated Circuits Division	IXYS
IXFK24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100	文件：91.67 Kbytes Page：4 Pages	HiPerFET-TMPowerMOSFET Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100F	文件：108 Kbytes Page：2 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementMode AvalancheRated,LowQg,LowIntrinsicRg HighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance -easytodriveandtoprotect	IXYS IXYS Integrated Circuits Division	IXYS
IXFN24N100F	文件：105.16 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs Features •Internationalstandardpackage •Encapsulatingepoxymeets UL94V-0,flammabilityclassification •miniBLOCwithAluminiumnitrideisolation •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •UnclampedInductiveSwitching(UIS)rated •Lowpackageindu	IXYS IXYS Integrated Circuits Division	IXYS
IXFR24N100	文件：36.22 Kbytes Page：2 Pages	HiPerFETTMPowerMOSFETsISOPLUS247TM(ElectricallyIsolatedBackSurface) HiPerFET™PowerMOSFETISOPLUS247™(ElectricallyIsolatedBackSurface) N-ChannelEnhancementModeAvalancheRated Features •SiliconchiponDirect-Copper-Bondsubstrate -Highpowerdissipation -Isolatedmountingsurface -2500Velectricalisolation •Lowdraintotabcapacit	IXYS IXYS Integrated Circuits Division	IXYS
IXFR24N100	文件：330.4 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=22A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=390mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX24N100	文件：367.67 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.39Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFX24N100	文件：139.35 Kbytes Page：4 Pages	HiPerFETPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFX24N100	文件：137.63 Kbytes Page：4 Pages	HiPerFETTMPowerMOSFETs	IXYS IXYS Integrated Circuits Division	IXYS
IXFX24N100F	文件：161.07 Kbytes Page：4 Pages	HiPerRFPowerMOSFETsF-Class:MegaHertzSwitching HiPerRFTMPowerMOSFETsF-Class:MegaHertzSwitching N-ChannelEnhancementModeAvalancheRated,LowQg,LowIntrinsicRgHighdV/dt,Lowtrr Features •RFcapableMOSFETs •Doublemetalprocessforlowgateresistance •UnclampedInductiveSwitching(UIS)rated •Lowpackageinductance	IXYS IXYS Integrated Circuits Division	IXYS
IXFX24N100F	文件：99.43 Kbytes Page：2 Pages	HiPerRFPowerMOSFETs HiPerFET™PowerMOSFETs N-ChannelEnhancementMode AvalancheRated FastIntrisicDiode Features •Internationalstandardpackages •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Avalancherated •Lowpackageinductance •Fastintrinsicrectifier Applications •	IXYS IXYS Integrated Circuits Division	IXYS
IXTX24N100	文件：103.68 Kbytes Page：4 Pages	N-ChannelEnhancementMode	IXYS IXYS Integrated Circuits Division	IXYS

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市惊羽科技有限公司	EXB-24N100JX	PANASONIC-松下	24+25+/26+27+	车规-电阻器	23405	一一有问必回一特殊渠道一有长期订货一备货HK仓库	询价
上海市鑫鸿达电子	EXB24N102JX	PANASONIC/松下	2022+		10000	全新原装货期两周	询价
贸泽芯城（深圳）电子科技有限公司	EXB24N102JX	PANASONIC/松下	21+ROHS		12012	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市明嘉莱科技有限公司	EXB24N102JX	PANASONIC/松下	13+	NA	880000	明嘉莱只做原装正品现货	询价
深圳市正迈科技有限公司	EXB24N360JX	PANASONIC	23+	NA	80000	专业电子元器件供应链正迈科技特价代理QQ1304306553	询价
深圳市华斯顿科技有限公司	EXB24N360JX	PANASONIC	22+23+	SMD	31302	绝对原装正品全新进口深圳现货	询价
深圳市正纳电子有限公司	EXB24N360JX	PANASONIC	ROHS+Original	NA	80000	专业电子元器件供应链/QQ 350053121 /正纳电子	询价
深圳市莱克讯科技有限公司	EXB24N562JX	PANASONIC	2017+	SMD	32256	深圳香港代理原装现货库存(美国-日本-台湾)可开正规增	询价
深圳市百视威讯电子科技有限公司	EXB24N562JX		23+	N/A	49500	正品授权货源可靠	询价
瀚佳科技(深圳)有限公司	EXB24N562JX	只做原装	21+		36520	一级代理/放心采购	询价

更多EXB-24N100JX供应商更新时间2024-5-16 16:16:00

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