金属（氧化物）覆膜固定电阻器

Panasonic

松下

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：82.29 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：34.22 Kbytes 页数：6 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：82.29 Kbytes 页数：7 Pages

RENESAS

瑞萨