P?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS ‐30V RDSON (MAX.) 24mΩ ID ‐8A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free ESD Protection

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EXCELLIANCE

杰力科技

Power MOSFETs-P Channel

Excelliance MOS

杰力科技

P-Channel 30-V (D-S) MOSFET

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VBSEMI

微碧半导体

TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

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Motorola

摩托罗拉

TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM

HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery

文件：244.94 Kbytes 页数：12 Pages

Motorola

摩托罗拉