N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 600V RDSON (MAX.) 4.0Ω ID 2A UIS, 100 Tested Pb‐Free Lead Plating & Halogen Free

文件：201.72 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

文件：397.15 Kbytes 页数：13 Pages

INFINEON

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

文件：251.9 Kbytes 页数：10 Pages

INFINEON

英飞凌

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

文件：86.47 Kbytes 页数：9 Pages

SIEMENS

西门子