N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 60V RDSON (MAX.) 8mΩ ID 60A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free

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N-Channel Enhancement

InPower Product Lines

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N-Channel Enhancement Mode Power MOSFET

Description The G08N06S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

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谷峰半导体

N-Channel Enhancement

InPower Product Lines

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

文件：319.42 Kbytes 页数：5 Pages

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