EMD05N50A

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

EMD05N50CS

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS500V RDSON(MAX.)1.85Ω ID5A UIS,100Tested Pb‐FreeLeadPlating

EMD05N50F

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS500V RDSON(MAX.)1.85Ω ID5A UIS,100Tested Pb‐FreeLeadPlating

FMC05N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve

FMC05N50E

N-CHANNELSILICONPOWERMOSFET

FMI05N50E

N-CHANNELSILICONPOWERMOSFET

FMP05N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FMV05N50E

N-CHANNELSILICONPOWERMOSFET

Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedurability Applica

FTP05N50D

N-ChannelEnhancement

InPowerProductLines

H05N50

N-CHANNELPOWERMOSFET