N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 500V RDSON (MAX.) 1.3Ω ID 7A UIS, 100 Tested Pb‐Free Lead Plating

文件：196.47 Kbytes 页数：6 Pages

EXCELLIANCE

杰力科技

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 500V RDSON (MAX.) 1.3Ω ID 7A UIS, 100 Tested Pb‐Free Lead Plating

文件：171.08 Kbytes 页数：5 Pages

EXCELLIANCE

杰力科技

N-CHANNEL SILICON POWER MOSFET

文件：514.809 Kbytes 页数：5 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

文件：332.93 Kbytes 页数：2 Pages

ISC

无锡固电