N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 500V RDSON (MAX.) 1.3Ω ID 7A UIS, 100 Tested Pb‐Free Lead Plating

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EXCELLIANCE

杰力科技

Power MOSFETs-N Channel

Excelliance MOS

杰力科技

N-CHANNEL SILICON POWER MOSFET

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Fuji

富士通

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=6.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

无锡固电

N-CHANNEL SILICON POWER MOSFET

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Fuji

富士通