EMD07N50F

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS500V RDSON(MAX.)1.3Ω ID7A UIS,100Tested Pb‐FreeLeadPlating

FMC07N50E

N-CHANNELSILICONPOWERMOSFET

FMC07N50E

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=6.5A@TC=25℃ ·DrainSourceVoltage- :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

FMI07N50E

N-CHANNELSILICONPOWERMOSFET

FMP07N50E

N-CHANNELSILICONPOWERMOSFET

FMV07N50E

N-CHANNELSILICONPOWERMOSFET

SuperFAP-E3series Features •Maintainsbothlowpowerlossandlownoise •LowerRDS(on)characteristic •Morecontrollableswitchingdv/dtbygateresistance •SmallerVGSringingwaveformduringswitching •Narrowbandofthegatethresholdvoltage(3.0±0.5V) •Highaval

SDF07N50

SuperhighdensecelldesignforlowRDS(ON).

SDF07N50T

N-ChannelMOSFETusesadvancedtrenchtechnology

SDF07N50T

SuperhighdensecelldesignforlowRDS(ON).

STHI07N50

HIGHINJECTIONN-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTORS(IGBT)

•HIGHINPUTIMPEDANCE •LOWON-VOLTAGE •HIGHCURRENTCAPABILITY APPLICATIONS: •AUTOMOTIVEIGNITION •DRIVERSFORSOLENOIDSANDRELAYS N-channelHighInjectionPOWERMOStransis- tors(IGBT)whichfeaturesahighimpedancein- sulatedgateinputandalowon-resistance characteristi