N-CHANNEL SILICON POWER MOSFET

文件：476.14 Kbytes 页数：5 Pages

FUJI

富士通

功率MOSFET 400V-500V

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

文件：468.3 Kbytes 页数：5 Pages

FUJI

富士通

N-CHANNEL SILICON POWER MOSFET

Super FAP-E3 series Features • Maintains both low power loss and low noise • Lower RDS(on) characteristic • More controllable switching dv/dt by gate resistance • Smaller VGS ringing waveform during switching • Narrow band of the gate threshold voltage (3.0±0.5V) • High aval

文件：446.29 Kbytes 页数：5 Pages

FUJI

富士通

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=6.5A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.85Ω(Max)@VGS= 10V APPLICATIONS · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：296.26 Kbytes 页数：2 Pages

ISC

无锡固电