HiPerFET Power MOSFET

Features • HiPerFET™ technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS i4-PACTM package - isolated back surface - low coupling capacity bet

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IXYS

艾赛斯

HiPerFET™ Power MOSFET

• HiPerFET™ technology\n• ISOPLUS i4-PACTM package\n• drives and power supplies\n• automotive, industrial vehicle etc.\n• secondary side of mains power supplies;

Littelfuse

力特

HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM

ID25 = 75 A VDSS = 100 V RDSon typ. = 18 mΩ Features • HiPerFETTM technology - low RDSon - low gate charge for high frequency operation - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode • ISOPLUS i4-PACTM package -

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IXYS

艾赛斯

75, 100 and 120 Ampere Bridges o Provides 0.40 C/W Junction-to-Case, Thermal Resistance

75, 100 and 120 Ampere Bridges Provides 0.40°C/W Junction-to-Case, Thermal Resistance

文件：51.98 Kbytes 页数：2 Pages

EDI

75, 100 and 120 Ampere Three Phase Br idges o Provides 0.23 C/W Junction-to-Case, Thermal Resistance

75, 100 and 120 Ampere Three Phase Bridges Provides 0.23 °C/W Junction-to-Case, Thermal Resistance

文件：53.35 Kbytes 页数：2 Pages

EDI