EMBJ7N25J

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

ProductSummary: BVDSS250V RDSON(MAX.)1.7Ω ID0.4A Rg100Tested Pb‐FreeLeadPlating&HalogenFree

FDD7N25LZTM

N-ChannelUniFETMOSFET

MDD7N25

N-ChannelMOSFET250V,6.2A,0.55(ohm)

MDD7N25RH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=6.2A@TC=25℃ ·DrainSourceVoltage :VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

MDD7N25RH

N-ChannelMOSFET250V,6.2A,0.55(ohm)

MDHT7N25

N-ChannelMOSFET250V,1.4A,0.55(ohm))

MDHT7N25URH

N-ChannelMOSFET250V,1.4A,0.55(ohm))