EMB20P03VAT-L规格书供应代理杰力科技-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
EMB20P03VAT-L	文件：903.7 Kbytes Page：6 Pages	P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 20mΩ ID -8.7A Single P Channel MOSFET Rg 100% Tested Pb-Free Lead Plating & Halogen Free 文件：903.7 Kbytes 页数：6 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE
EMB20P03VAT-L	文件：300 bytes Page：1 Pages	Power MOSFETs-P Channel	Excelliance MOS 杰力科技	Excelliance MOS
EMZB20P03L	文件：183 Kbytes Page：5 Pages	P?륝hannel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS ‐30V RDSON (MAX.) 24mΩ ID ‐8A UIS, Rg 100 Tested Pb‐Free Lead Plating & Halogen Free ESD Protection 文件：183 Kbytes 页数：5 Pages	EXCELLIANCE 杰力科技	EXCELLIANCE
ME20P03	文件：1.01498 Mbytes Page：9 Pages	P-Channel 30-V (D-S) MOSFET 文件：1.01498 Mbytes 页数：9 Pages	VBSEMI 微碧半导体	VBSEMI
MTD20P03	文件：244.94 Kbytes Page：12 Pages	TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM HDTMOS E-FET High Density Power FET DPAK for Surface Mount P–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery 文件：244.94 Kbytes 页数：12 Pages	Motorola 摩托罗拉	Motorola

更多EMB20P03VAT-L供应商更新时间2025-10-13 14:01:00