EVQPF306K

5NTypeLightTouchSwitches

5NTypeLightTouchSwitches ■Features ●Wealthofproducttypes:Withorwithoutagroundterminal,verticaltype,snap-interminals,etc. ●Canbeautomaticallydip-soldered:Integralmoldingoftheterminalsandmainbodypreventstheescapeofflux. ■RecommendedApplications ●Operat

EVQPF306K

5NTypeSide-operationalLightTouchSwitches

■Features ●Wealthofproducttypes:Horizontaltype,snap-interminals,etc. ●Canbeautomaticallydip-soldered:Integralmoldingoftheterminalsandmainbodypreventstheescapeofflux. ■RecommendedApplications ●Operatingswitchesforotherelectronicequipment

EVQPF306K

5NTypeSide-operationalLightTouchSwitchesWealthofproducttypes:Horizontaltype

F306

HCMOS3.2x2.5mm1.0VSMDOscillator

F306R

HCMOS3.2x2.5mm1.0VSMDOscillator

FDB306

3AMPFASTRECOVERYBRIDGERECTIFIERS

FDD306P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VSpecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagement. Features ■–6.7A,–12V.RDS(ON)=28mΩ@VGS=–4.5VRDS(ON)=41mΩ@VGS=–2.5VRDS(ON)=90mΩ@VGS=–1.8V ■Fast

FDD306P

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-20A RDS(ON)

FDN306

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications •Batterymanagement •Loadswitch •Batteryprotection Features •–2.6A,–12V.RDS(ON)

FDN306P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5VRDS(ON)=50mΩ@VGS=–2.5VRDS(ON)=80mΩ@VGS=–