100V N-ch MOSFET

HuaYuanWei

华沅微

High Power Limiters 4 GHz to 8 GHz

文件：178.95 Kbytes 页数：2 Pages

MICRONETICS

微盟电子

GaAs Infrared Light Emitting Diode (950 nm, 12 mil)

Features • Typ. total radiant power: 15 mW @ 100 mA in TOPLED® package • Chip size 300 x 300 µm2 • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capability Applications • M

文件：69.13 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

GaAs Infrared Light Emitting Diode (950 nm, 12 mil)

Features • Typ. total radiant power: 15 mW @ 100 mA in TOPLED® package • Chip size 300 x 300 µm2 • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capability Applications • M

文件：69.13 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗