GaAs Infrared Light Emitting Diode (950 nm, 12 mil)

Features • Typ. total radiant power: 15 mW @ 100 mA in TOPLED® package • Chip size 300 x 300 µm2 • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capability Applications • M

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OSRAM

艾迈斯欧司朗

N-Ch 100V Fast Switching MOSFETs

Features  Advanced Trench MOS Technology  100 EAS Guaranteed  Fast Switching Speed  Green Device Available Applications  High Frequency Switching and Synchronous Rectification.  DC/DC Converter.

文件：628.16 Kbytes 页数：4 Pages

FETEK

台湾东沅

N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology  100 EAS Guaranteed  Fast Switching Speed  Green Device Available Applications High Frequency Switching and Synchronous Rectification. DC/DC Converter.

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FETEK

台湾东沅

N-Ch 100V Fast Switching MOSFETs

Description The FKF0094 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger.

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FETEK

台湾东沅