High Power Limiters 4 GHz to 8 GHz

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MICRONETICS

微盟电子

GaAs Infrared Light Emitting Diode (950 nm, 12 mil)

Features • Typ. total radiant power: 15 mW @ 100 mA in TOPLED® package • Chip size 300 x 300 µm2 • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capability Applications • M

文件：69.13 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

GaAs Infrared Light Emitting Diode (950 nm, 12 mil)

Features • Typ. total radiant power: 15 mW @ 100 mA in TOPLED® package • Chip size 300 x 300 µm2 • Very highly efficient GaAs LED • Good linearity (Ie = f [IF]) at high currents • DC or pulsed operations are possible • High reliability • High pulse handling capability Applications • M

文件：69.13 Kbytes 页数：7 Pages

OSRAM

艾迈斯欧司朗

N-Ch 100V Fast Switching MOSFETs

Features  Advanced Trench MOS Technology  100 EAS Guaranteed  Fast Switching Speed  Green Device Available Applications  High Frequency Switching and Synchronous Rectification.  DC/DC Converter.

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FETEK

台湾东沅