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F306

HCMOS3.2x2.5mm1.0VSMDOscillator

FOX

Fox Electronics

F306R

HCMOS3.2x2.5mm1.0VSMDOscillator

FOX

Fox Electronics

FDB306

3AMPFASTRECOVERYBRIDGERECTIFIERS

DEC

DIOTEC Electronics Corporation

FDD306P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VSpecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess.Ithasbeenoptimizedforbatterypowermanagement. Features ■–6.7A,–12V.RDS(ON)=28mΩ@VGS=–4.5VRDS(ON)=41mΩ@VGS=–2.5VRDS(ON)=90mΩ@VGS=–1.8V ■Fast

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDD306P

P-channelEnhancementModePowerMOSFET

Features VDS=-30V,ID=-20A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

FDN306

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications •Batterymanagement •Loadswitch •Batteryprotection Features •–2.6A,–12V.RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

FDN306P

P-Channel1.8VSpecifiedPowerTrenchMOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETusesFairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagementapplications. Features •–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5VRDS(ON)=50mΩ@VGS=–2.5VRDS(ON)=80mΩ@VGS=–

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDN306P

SingleP-ChannelPowerTrenchMOSFET

TECHPUBLICTECH PUBLIC Electronics co LTD

台舟电子台舟电子股份有限公司

FDN306P

P-Channel1.8V(D-S)MOSFET

Features •–2.6A,–12V.RDS(ON)=40mΩ@VGS=–4.5V RDS(ON)=50mΩ@VGS=–2.5V RDS(ON)=80mΩ@VGS=–1.8V •Fastswitchingspeed •Highperformancetrenchtechnologyforextremely lowRDS(ON) •SuperSOTTM-3provideslowRDS(ON)and30higher powerhandlingcapabilitythanSOT

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

FDN306P

P-Channel1.8V(D-S)MOSFET

GeneralDescription ThisP-Channel1.8VspecifiedMOSFETuses Fairchild’sadvancedlowvoltagePowerTrenchprocess. Ithasbeenoptimizedforbatterypowermanagement applications. Applications •Batterymanagement •Loadswitch •Batteryprotection Features •–2.6A,–12V.RDS(ON)

EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED

翊欧翊欧半导体

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