Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 15mA PER BIN RANGE

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Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 720 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 15mA P

文件：43.63 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +26.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 15mA PER BIN RANGE

文件：33.36 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • +26.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 15mA P

文件：32.53 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +23.5dBm TYPICAL OUTPUT POWER • 7.0 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

文件：23.51 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +23.5dBm TYPICAL OUTPUT POWER • 7.0 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

文件：25.69 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +37.0dBm TYPICAL OUTPUT POWER • 16.0dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 12,000 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTE

文件：31.44 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +28.0dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 20mA PER BIN RANGE

文件：37.79 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +28.0dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN FOR EFA120B AND 11.5dB FOR EFA120BV AT 12GHz • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

文件：36.19 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

FEATURES • +28.0dBm TYPICAL OUTPUT POWER • 19.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 30mA PER BIN RANGE

文件：50.79 Kbytes 页数：2 Pages

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