| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
High Gain GaAs Power FET High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN RANGE 文件：25.38 Kbytes 页数：2 Pages | Excelics | Excelics | ||
High Gain GaAs Power FET [Excelics] High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN 文件：28.02 Kbytes 页数：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Low Distortion GaAs Power FET Low Distortion GaAs Power FET • +23.0dBm TYPICAL OUTPUT POWER • 10.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 10mA PER BIN RANG 文件：33.83 Kbytes 页数：2 Pages | Excelics | Excelics | ||
Low Distortion GaAs Power FET Low Distortion GaAs Power FET • NON-HERMETIC 100MIL METAL FLANGE PACKAGE • +23.0dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY A 文件：92.57 Kbytes 页数：2 Pages | Excelics | Excelics | ||
Low Distortion GaAs Power FET Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +22.0dBm TYPICAL OUTPUT POWER • 8.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RE 文件：23.58 Kbytes 页数：2 Pages | Excelics | Excelics | ||
Low Distortion GaAs Power FET [Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +22.0dBm TYPICAL OUTPUT POWER • 8.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINE 文件：26.62 Kbytes 页数：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Low Distortion GaAs Power FET Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 文件：33.93 Kbytes 页数：2 Pages | Excelics | Excelics | ||
Low Distortion GaAs Power FET Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +24.0dBm TYPICAL OUTPUT POWER • 7.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R 文件：23.59 Kbytes 页数：2 Pages | Excelics | Excelics | ||
Low Distortion GaAs Power FET [Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +24.0dBm TYPICAL OUTPUT POWER • 7.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN 文件：25.84 Kbytes 页数：2 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Low Distortion GaAs Power FET Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY 文件：33.93 Kbytes 页数：2 Pages | Excelics | Excelics |
产品属性
- 产品编号：
ISL9001IRRZ-T
- 制造商：
Renesas Electronics America Inc
- 类别：
集成电路（IC） > 线性 + 开关稳压器
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 输出配置：
正
- 输出类型：
固定
- 电压 - 输入（最大值）：
6.5V
- 电压 - 输出（最小值/固定）：
2.6V
- 电压降（最大值）：
0.4V @ 300mA
- 电流 - 输出：
300mA
- 控制特性：
使能，上电复位
- 保护功能：
过流，超温，软启动，欠压锁定（UVLO）
- 工作温度：
-40°C ~ 85°C
- 安装类型：
表面贴装型
- 封装/外壳：
8-VFDFN 裸露焊盘
- 供应商器件封装：
8-DFN（2x3）
- 描述：
IC REG LINEAR 2.6V 300MA 8DFN
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
25+ |
DFN-8 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
INTERSIL |
21+ |
DFN-8 |
10000 |
原装现货假一罚十 |
询价 | ||
INTERSIL |
23+ |
DFN-8 |
98 |
现货库存 |
询价 | ||
Renesas |
22+ |
8-VFDFN |
9000 |
原厂渠道,现货配单 |
询价 | ||
INTERSIL |
23+ |
DFN-8 |
8000 |
只做原装现货 |
询价 | ||
Intersil |
2318+ |
VFDFN-8 |
6890 |
长期供货进口原装热卖现货 |
询价 | ||
INTERSIL |
23+ |
DFN-8 |
7000 |
询价 | |||
Renesas Electronics America In |
25+ |
8-VFDFN 裸露焊盘 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
IDT/RENESAS |
22+ |
SC70, uTDFN |
24500 |
瑞萨全系列在售 |
询价 | ||
Intersil |
22+ |
SC705 |
9000 |
原厂渠道,现货配单 |
询价 |
相关规格书
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