丝印：EFA；Package：8Ld2x3DFN；LDO with Low ISUPPLY, High PSRR

LDO with Low ISUPPLY, High PSRR ISL9001 is a high performance Low Dropout linear regulator capable of sourcing 300mA current. It has a low standby current and high-PSRR and is stable with an output capacitance of 1µF to 10µF with an ESR of up to 200mΩ. The ISL9001 has a very high PSRR of 90dB an

文件：600.49 Kbytes 页数：11 Pages

RENESAS

瑞萨

丝印：EFA；Package：DO-214AA；Transient Voltage Suppressors

600 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle):0.01 % Low leakage Uni and Bidirectional unit Excellent clamping capability Very fast response time RoHS compliant Features Glass passivated chip High reliability application and automotive

文件：1.58939 Mbytes 页数：4 Pages

LUGUANG

鲁光电子

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • VERY HIGH fmax: 100GHz • +18.5dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PR

文件：157.66 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +18.5dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAX

文件：23.91 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +18.5dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADV

文件：25.93 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +18.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.6 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz • 0.3 X 240 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIEN

文件：49.27 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +21.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIEN

文件：37.5 Kbytes 页数：3 Pages

Excelics

Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

文件：107.56 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

文件：107.56 Kbytes 页数：3 Pages

Excelics

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +20.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVAN

文件：48.54 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商