Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

文件：107.56 Kbytes 页数：3 Pages

EXCELICS

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +20.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVAN

文件：48.54 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Distortion GaAs Power FET

Excelics

High Efficiency Heterojunction Power FET

文件：35.75 Kbytes 页数：2 Pages

EXCELICS

High Efficiency Heterojunction Power FET

文件：48.96 Kbytes 页数：2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Low Noise High Gain Heterojunction FET

Low Noise High Gain Heterojunction FET • NON-HERMETIC LOW COST CERAMIC 70 mil PACKAGE • TYPICAL 0.85dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GA

文件：23.43 Kbytes 页数：2 Pages

EXCELICS