Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • VERY HIGH fmax: 100GHz • +18.5dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PR

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Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +18.5dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADV

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +18.5dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.1dB NOISE FIGURE AND 10.5dB ASSOCIATED GAIN AT 12GHz • 0.3 X 180 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAX

文件：23.91 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

Excelics

Low Distortion GaAs Power FET

Excelics