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EFA025A

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +21.0dBm TYPICAL OUTPUT POWER • 11.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5 dB NOISE FIGURE AND 10 dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIEN

文件:37.5 Kbytes 页数:3 Pages

Excelics

EFA025A-100P

Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

文件:107.56 Kbytes 页数:2 Pages

Excelics

EFA025A-70

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +20.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • TYPICAL 1.5dB NOISE FIGURE AND 10dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVAN

文件:48.54 Kbytes 页数:2 Pages

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EFA025A-70

Low Distortion GaAs Power FET

FEATURES • None-Hermetic Low Cost Ceramic 70mil Package • +20.0 dBm Output Power at 1dB Compression • 10.0 dB Power Gain at 12GHz • 7.0 dB Power Gain at 18GHz • Typical 1.50 dB Noise Figure and 10.0 dB Associated Gain at 12GHz • 0.3 x 250 Micron Recessed “Mushroom” Gate • Si3N4 Passivation

文件:107.56 Kbytes 页数:3 Pages

Excelics

EFA025AL

High Gain GaAs Power FET

High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN RANGE

文件:25.38 Kbytes 页数:2 Pages

Excelics

EFA025AL

High Gain GaAs Power FET

[Excelics] High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN

文件:28.02 Kbytes 页数:2 Pages

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EFA025A

6-12V low distortion GaAs power FET

Excelics

EFA025A-100P

Low Distortion GaAs Power FET

Excelics

EFA025A-70

Low Distortion GaAs Power FET

Excelics

详细参数

  • 型号:

    EFA025A

  • 制造商:

    EXCELICS

  • 制造商全称:

    EXCELICS

  • 功能描述:

    Low Distortion GaAs Power FET

供应商型号品牌批号封装库存备注价格
EXCELICS
2450+
na
8850
只做原装正品假一赔十为客户做到零风险!!
询价
最新
2000
原装正品现货
询价
EXCELICS
23+
SO77
50000
全新原装正品现货,支持订货
询价
EXCELICS
24+
SOT766
64580
原装现货假一赔十
询价
EFA025A-70
245
245
询价
EXLICES
23+
15
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
EXCELICS
08+
SMT70
800
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Excelics Semic.
23+
2521
原厂原装正品
询价
Exlices
21+
SMT70
719
原包标签.100%进口原装.常备现货!
询价
EXCELS
24+
NA/
800
优势代理渠道,原装正品,可全系列订货开增值税票
询价
更多EFA025A供应商 更新时间2025-10-11 16:36:00