ECH81

TRIODE-HEPTODE

[RFT] TRIODE-HEPTODE

ECH8101

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •Highspeedswitching. •Highallowablepowerdissipation. •Halogenfreecompliance. Applications •High-power

ECH8102

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

High-CurrentSwitchingApplications Features •AdoptionofFBET,MBITprocess. •Highcurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •Highspeedswitching. •Highallowablepowerdissipation. •Halogenfreecompliance. •IECOisguaranteedforpreventingreverseflow

ECH8102

Bipolar Transistor

BipolarTransistor –30V,–12A,LowVCE(sat),PNPSingleECH8 Features •AdoptionofFBET,MBITprocess •Highcurrentcapacitance •Lowcollector-to-emittersaturationvoltage •Highspeedswitching •Highallowablepowerdissipation •Halogenfreecompliance •IECOisguaranteedforp

ECH8102-TL-H

Bipolar Transistor

BipolarTransistor –30V,–12A,LowVCE(sat),PNPSingleECH8 Features •AdoptionofFBET,MBITprocess •Highcurrentcapacitance •Lowcollector-to-emittersaturationvoltage •Highspeedswitching •Highallowablepowerdissipation •Halogenfreecompliance •IECOisguaranteedforp

ECH8102-TL-H

Package：8-SMD，扁平引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 12A 8ECH