40GHz Super Low Noise PHEMT

Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to

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40GHz Super Low Noise pHEMT

文件：140.18 Kbytes 页数：8 Pages

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40GHz Super Low Noise PHEMT Pseudomorphic High Electron Mobility Transistor

Description\nThe EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to very 0.8dB minimum noise figure @ 18GHz\n1.5dB minimum noise figure @ 40GHz\n12dB associated gain @ 18GHz\n9.5dB associated gain @ 40GHz;

UMS

40GHz Super Low Noise PHEMT

Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to

文件：111.13 Kbytes 页数：8 Pages

UMS

40GHz Super Low Noise PHEMT

Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to

文件：111.13 Kbytes 页数：8 Pages

UMS

40GHz Super Low Noise pHEMT

文件：140.18 Kbytes 页数：8 Pages

UMS

40GHz Super Low Noise pHEMT

 \n The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.\n Gate width is 120µm and the 0.15µm. T-shaped aluminium gate features low resistance and excellent reliability.\n The device shows a very high transconductance which lead

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