40GHz Super Low Noise PHEMT

Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to

文件：111.13 Kbytes 页数：8 Pages

UMS

40GHz Super Low Noise PHEMT

Description The EC2612 is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm PHEMT) technology. Gate width is 120µm and the 0.15µm T-shaped aluminium gate features low resistance and excellent reliability. The device shows a very high transconductance which leads to

文件：111.13 Kbytes 页数：8 Pages

UMS

40GHz Super Low Noise pHEMT

 \n The EC2612-99F is based on a 0.15µm gate pseudomorphic high electron mobility transistor (0.15µm pHEMT) technology.\n Gate width is 120µm and the 0.15µm. T-shaped aluminium gate features low resistance and excellent reliability.\n The device shows a very high transconductance which lead

UMS

SMD

ALPS

阿尔卑斯

上传：深圳市盛泰捷科电子有限公司

音量开关

ALPS

阿尔卑斯

上传：深圳市鸿昌盛电子科技有限公司