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E12N65

丝印:E12N65;Package:TO-263;12A 650V N-channel Enhancement Mode Power MOSFET

文件:891.93 Kbytes 页数:11 Pages

WXDH

东海半导体

E12N65

丝印:E12N65;Package:TO-263;12A 650V N-channel Enhancement Mode Power MOSFET

文件:891.31 Kbytes 页数:11 Pages

WXDH

东海半导体

E12N65

丝印:E12N65;Package:TO-263;12A 650V N-channel Enhancement Mode Power MOSFET

文件:891.23 Kbytes 页数:11 Pages

WXDH

东海半导体

E12N65

丝印:E12N65;Package:TO-263;12A 650V N-channel Enhancement Mode Power MOSFET

文件:892.18 Kbytes 页数:11 Pages

WXDH

东海半导体

IDWD120E120D7

丝印:E120MD7;Package:PG-TO247-2-STD-NA8.8;Soft and ultra-fast recovery 1200 V Emitter controlled 7 diode for both Industrial and Home Appliance applications

Features • VRRM = 1200 V • IF = 120 A • 1200 V emitter controlled technology • Maximum junction temperature Tvjmax = 175°C • Low forward voltage (VF) • Low reverse recovery charge • Ultrafast recovery times • Soft recovery characteristics • Pb-free lead plating; RoHS compliant • Humidity

文件:1.20447 Mbytes 页数:12 Pages

INFINEON

英飞凌

IDWD120E65E7

丝印:E120EE7;Package:PG-TO247-2-STD-NA8.8;The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability for both Industrial and Home Appliance applications

Features • VRRM = 650 V • IF = 120 A • Low and temperature stable forward voltage (VF) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for targ

文件:1.30151 Mbytes 页数:11 Pages

INFINEON

英飞凌

RQ3E120BN

丝印:E120BN;Package:HSMT8;Nch 30V 12A Middle Power MOSFET

文件:2.6761 Mbytes 页数:12 Pages

ROHM

罗姆

E1200NC20C

High Power SONIC-FRD™

Introducing a world-leading class of ultra fast and ultra soft recovery diode available from 1.7kV to 4.5kV in current ratings from 300 to 4000A.These diodes incorporate a unique manufacturing process and lifetime control to offer a class leading trade-off between conduction and switching loses. The;

Littelfuse

力特

E1200NC25C

快速恢复

Introducing a world-leading class of ultra fast and ultra soft recovery diode available from 1.7kV to 4.5kV in current ratings from 300 to 4000A.These diodes incorporate a unique manufacturing process and lifetime control to offer a class leading trade-off between conduction and switching loses. The;

Littelfuse

力特

E1200NH25C

快速恢复

Introducing a world-leading class of ultra fast and ultra soft recovery diode available from 1.7kV to 4.5kV in current ratings from 300 to 4000A.These diodes incorporate a unique manufacturing process and lifetime control to offer a class leading trade-off between conduction and switching loses. The;

Littelfuse

力特

技术参数

  • Average Continuous Current Rating @ TK = 55 ℃ [Diode] (A):

    1338

  • Maximum Surge Current - 10ms Half Sine Wave [Diode] (A):

    13300

  • I2t [Diode] (A2s):

    884 x 103

  • Max Reverse Recovery Current:

    650

  • Typical Reverse Recovery Time (µs):

    4.00

  • Reverse Recovery Charge (µC):

    2000

  • TJ Max (°C):

    150

  • Package Type:

    W5

  • Threshold Voltage (V):

    1.305

  • Slope Resistance (mOhm):

    0.678

  • Thermal resistance [junction-heat sink] 180° Sine Wave (K/W):

    0.0200

  • Sample Capable:

    No

  • Check Stock:

    No

供应商型号品牌批号封装库存备注价格
E-MECH
1
CK
852
询价
MECHATRONICS
05+
原厂原装
4666
只做全新原装真实现货供应
询价
进口
1430+
晶片
5800
全新原装,公司大量现货供应,绝对正品
询价
MORNSUN
17+
DIP
6200
100%原装正品现货
询价
C&K
24+/25+
78
原装正品现货库存价优
询价
NA
NA
299
正品原装--自家现货-实单可谈
询价
INTEL
2016+
BGA
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
MORNSUN
23+
模块
5000
原装正品,假一罚十
询价
24+
112
询价
SMD
24+
1206
5000
只做原装公司现货
询价
更多E12供应商 更新时间2026-1-28 9:01:00