丝印：E120EE7；Package：PG-TO247-2-STD-NA8.8；The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability for both Industrial and Home Appliance applications

Features • VRRM = 650 V • IF = 120 A • Low and temperature stable forward voltage (VF) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for targ

文件：1.30151 Mbytes 页数：11 Pages

INFINEON

英飞凌

The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability

Features • VRRM = 650 V • IF = 120 A • Low and temperature stable forward voltage (VF ) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for

文件：1.30155 Mbytes 页数：11 Pages

INFINEON

英飞凌

采用 TO-247-2 2 引脚封装的 650 V 硅功率二极管

\n优势:\n• High efficiency system\n• Maximize system output power\n• Optimized performance\n• Humidity robustness;

Infineon

英飞凌

The Soft 650 V Emitter Controlled Si Diode 7 offers improved reliability

Features • VRRM = 650 V • IF = 120 A • Low and temperature stable forward voltage (VF ) • Very soft and fast recovery • Low reverse recovery current (Irrm) • Humidity robust design • Cosmic ray ruggedness • Maximum junction temperature Tvjmax = 175°C • Qualified according to JEDEC for

文件：1.30155 Mbytes 页数：11 Pages

INFINEON

英飞凌