PNP

40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8 • BVCEO > -40V• Small Form Factor Thermally Efficient Package.• Enables Higher Density End Products• IC = -3A High Continuous Current• ICM = -6A Peak Pulse Current• Low Saturation Voltage VCE(sat) < -400mV @ -1A• Minimum hFE 200 @ IC=-1A• Rated to +175°C—Ideal For High Temperature Environment• Wetta;

Diodes

美台半导体

Package：8-PowerVDFN；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 3A POWERDI3

DIODES

美台半导体

40V, SOT23F, PNP medium power transistor

Description This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density

文件：455.5 Kbytes 页数：6 Pages

DIODES

美台半导体

40V, SOT23F, PNP medium power transistor

Description This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density

文件：443.23 Kbytes 页数：6 Pages

Zetex

40V, SOT23F, PNP medium power transistor

Description This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density

文件：455.5 Kbytes 页数：6 Pages

DIODES

美台半导体